Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors

Abstract

In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.

arXiv comment6 pages, 11figures, accepted for Nuclear Instruments and Methods in Physics Research Section A (NIMA)

References in corpus (2)

• Proton Radiation Damage Experiment on P-Channel CCD for an X-ray CCD camera onboard the Astro-H satellite
• Compensation for TID Damage in SOI Pixel Devices

Cited by in corpus (5)

• Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
• Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy
• Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
• Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors
• Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure