Electrical Contact Resistance in Graphite-Graphene contacts from ab initio methods
arXiv:1810.08506 · doi:10.1088/1361-648X/aacd83
Abstract
We study the ballistic transmission and the contact resistance () of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated 's depend on the amount of graphene-graphite overlap, but quickly saturate for transfer lengths of the order of 20 Å. For contacts overlapping more than this transfer length, the can be lower than the 100 Ωμm mark. On the other hand, edge graphite-graphene contacts are expected to have very low contact resistance.
10 pages, 6 figures. Preprint before first submission. Final version in journal has improvements
References in corpus (4)
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Improvements on non-equilibrium and transport Green function techniques: the next-generation transiesta
- Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
- Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors