Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb(SiO) nanogranular films
arXiv:1810.07087 · doi:10.1103/PhysRevB.99.094204
Abstract
We have studied the low-temperature electrical transport properties of Pb(SiO) ( being the Pb volume fraction) nanogranular films with thicknesses of 1000 nm and spanning the dielectric, transitional, and metallic regions. It is found that the percolation threshold lies between 0.57 and 0.60. For films with 0.50, the resistivities as functions of temperature obey relation ( being the local superconducting gap and the Boltzmann constant) below the superconducting transition temperature (7 K) of Pb granules. The value of the gap obtained via this expression is almost identical to that by single electron tunneling spectra measurement. The magnetoresistance is negative below and its absolute value is far larger than that above at a certain field. These observations indicate that single electron hopping (or tunneling), rather than Cooper pair hopping (or tunneling) governs the transport processes below . The temperature dependence of resistivities shows reentrant behavior for the 0.500.57 films. It is found that single electron hopping (or tunneling) also dominates the low-temperature transport process for these films. The reduction of the single electron concentration leads to an enhancement of the resisivity at sufficiently low temperature. For the 0.600.72 films, the resistivities sharply decrease with decreasing temperature just below , and then show dissipation effect with further decreasing temperature. Treating the conducting paths composed of Pb particles as nanowires, we have found that the data below can be well explained by a model that includes both thermally activated phase slips and quantum phase slips.
arXiv comment8 pages, 6 figures
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