Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
arXiv:1809.08061 · doi:10.1103/PhysRevB.98.195315
Abstract
We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43 meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 μeV as well as the relatively weak exciton-phonon interaction (0.8 μeV/K) confirm a strong, quantum dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
arXiv comment4 figs
References in corpus (6)
- Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells
- Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
- Damping of Rabi oscillations in intensity-dependent photon echoes from exciton complexes in a CdTe/(Cd,Mg)Te single quantum well
- Coherent dynamics of localized excitons and trions in ZnO/(Zn,Mg)O quantum wells studied by photon echoes
- Resolution of Discrete Excited States in InGaN Multiple Quantum Wells using Degenerate Four Wave Mixing
- Transient photon echoes from donor-bound excitons in ZnO epitaxial layers