The effect of electron-phonon interactions on the spectral properties of single defects in hexagonal boron nitride

Abstract

We investigate temperature-dependent spectral properties of a single defect in hexagonal boron nitride (hBN). We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the Raman active low-energy ($\approx 6.5$ meV) interlayer shear mode of hBN. Spectral lineshape around the ZPL is measured down to 78 K, at which the linewidth of the ZPL is measured as 172 $\mu$eV. By employing a quadratic electron-phonon interaction, the temperature-dependent broadening and the lineshift of the ZPL are found to follow $T+T^5$ and $T+T^3$ temperature dependence, respectively. Furthermore, the temperature-dependent lineshape around the ZPL is modeled with a linear electron-phonon coupling theory, which results in the Debye-Waller factor of the ZPL emission as 0.59.

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Cited by in corpus (3)

• Temperature-Dependent Emission Spectroscopy of Quantum Emitters in Hexagonal Boron Nitride
• Disorder-Engineered Hybrid Plasmonic Cavities for Emission Control of Defects in hBN
• Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride