The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater

Abstract

Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3, where electronic, structural and magnetic phase transitions occur simultaneously. This remarkable concomitance makes the understanding of the origin of the MIT a challenge due to the many degrees of freedom at play. In this work, we demonstrate that magnetism plays the key dominant role. By acting on the magnetic degree of freedom, we reveal an anomalous behaviour of the magnetoresistance of V2O3, which provides strong evidence that the origin of the MIT in V2O3 is the opening of an antiferromagnetic gap in the presence of strong electronic correlations.

arXiv comment7 pages, 4 figures

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Cited by in corpus (8)

• Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V${}_2$O${}_3$
• Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition
• Metal-insulator transition and antiferromagnetism in the generalized Hubbard model: Treatment of correlation effects
• Uniform structural phase transition in V${}_2$O${}_3$ without short-range distortions of the local structure
• Direct visualization of percolating metal-insulator transition in V2O3 using scanning microwave impedance microscopy
• Stress-tailoring magnetic anisotropy of V${}_2$O${}_3$/Ni bilayers
• Metal to insulator transition at the surface of $V_2{O}_3$ thin films: an in-situ view
• Magnetoresistivity in the Antiferromagnetic Hubbard Model