Excitonic properties of F-centers in -alumina from First Principles Calculation
arXiv:1807.10989 · doi:10.1103/PhysRevB.99.144102
Abstract
We use state-of-the art GW-BSE formalism to study electronic structure and optical properties of oxygen vacancies in -alumina. Many body perturbation theory within GW approximation in recent years have been used extensively to study excited state properties of a wide range of systems. Moreover, solving Bethe-Salpeter equation (BSE) enable us to capture excitonic effects in a material. We compute the charge transition levels (CTLs) for oxygen vacancies using DFT+GW formalism. We propose an alternative approach to calculate these CTLs, which provides a more efficient way to perform electrostatic correction required because of finite supercell sizes and periodic boundary condition used in first principles calculations. We find that oxygen vacancy in this material has deep donor levels, (+2/+1) at 2.5 eV and a (+1/0) level at 3.8 eV above the VBM. We also study F-center absorption and emission processes using constrained--DFT and BSE. Our calculated absorption and emission energies are in excellent agreement with experimental results.
References in corpus (9)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- BerkeleyGW: A Massively Parallel Computer Package for the Calculation of the Quasiparticle and Optical Properties of Materials and Nanostructures
- Quantum computing with defects
- Electrostatics-based finite-size correction for first-principles point defect calculations
- Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial
- Coulomb-hole summations and energies for GW calculations with limited number of empty orbitals: a modified static remainder approach
- CoFFEE: Corrections For Formation Energy and Eigenvalues for charged defect simulations
- Quasiparticle Excitations and Charge Transition Levels of Oxygen Vacancies in Hafnia
- Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)