Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Abstract

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}{\text{n}}_{\text{eq}}/{\text{cm}}^2$ and detection efficiencies above $99.5\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

arXiv comment6 pages, 7 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

References in corpus (6)

• Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
• The MuPix System-on-Chip for the Mu3e Experiment
• The FE-I4 Telescope for particle tracking in testbeam experiments
• Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
• Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
• Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

Cited by in corpus (3)

• Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
• Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
• Overview of CMOS sensors for future tracking detectors