Interaction induced edge states in HgTe/CdTe Quantum Well under magnetic field

Abstract

In this paper, we study doped HgTe/CdTe quantum well with Hubbard-type interaction under perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term creates edge-like electronic states which can explain the experimentally discovered edge conductance in doped HgTe/CdTe quantum well at similar magnetic field regime.

8 pages and 7 figures

References in corpus (9)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• The Quantum Spin Hall Effect: Theory and Experiment
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Magnetic properties of HgTe quantum wells
• Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells
• Robustness of Quantum Spin Hall Effect in an External Magnetic Field
• Reentrant topological phases in Mn-doped HgTe quantum wells

Cited by in corpus (5)

• Phase transitions in the Haldane-Hubbard model
• Characterization of helical states in semiconductor quantum wells using quantum information quantities
• Topological and magnetic properties of the interacting Bernevig-Hughes-Zhang model
• Magnetoconductance Oscillations in Electron-hole Hybridization Gaps and Valley Splittings in Tetralayer Graphene
• Edge Reconstruction in a Quantum Spin Hall Insulator