Graphene quantum blisters: a tunable system to confine charge carriers

Abstract

Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carriers. Here we propose that bilayer graphene with a local region of decoupled graphene layers is able to generate bound states under the application of an electrostatic gate. The discrete energy levels in such a quantum blister correspond to localized electron and hole states in the top and bottom layers. We find that this layer localization and the energy spectrum itself are tunable by a global electrostatic gate and that the latter also coincides with the electronic modes in a graphene disk. Curiously, states with energy close to the continuum exist primarily in the classically forbidden region outside the domain defining the blister. The results are robust against variations in size and shape of the blister which shows that it is a versatile system to achieve tunable electrostatic confinement in graphene.

arXiv comment6 pages, 4 figures

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Cited by in corpus (6)

• Band gap engineering in AA-stacked bilayer graphene
• Electron collimation at van der Waals domain walls in bilayer graphene
• Improved graphene blisters by ultrahigh pressure sealing
• Electrical dipole on gapped graphene: Bound states and atomic collapse
• Tunneling in an anisotropic cubic Dirac semi-metal
• Confined states in graphene quantum blisters