Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
arXiv:1805.03555 · doi:10.1063/1.5030625
Abstract
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on period thickness.
arXiv comment5 pages, 7 figures; accepted for publication in Applied Physics Letters
References in corpus (6)
- Theory and simulation of quantum photovoltaic devices based on the non-equilibrium Green's function formalism
- Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers
- Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture
- Impact of nanostructure configuration on the photovoltaic performance of quantum dot arrays
- Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells
- Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells