Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture
arXiv:1407.4164 · doi:10.1117/1.JPE.4.042099
Abstract
In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.
15 pages, 10 figures
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- Effective microscopic theory of quantum dot superlattice solar cells
- Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells