Floquet Topological Polaritons in Semiconductor Microcavities
arXiv:1805.00657 · doi:10.1103/PhysRevB.97.195305
Abstract
We propose and model Floquet topological polaritons in semiconductor microcavities, using the interference of frequency detuned coherent fields to provide a time periodic potential. For arbitrarily weak field strength, where the Floquet frequency is larger than the relevant bandwidth of the system, a Chern insulator is obtained. As the field strength is increased, a topological phase transition is observed with an unpaired Dirac cone proclaiming the anomalous Floquet topological insulator. As the relevant bandwidth increases even further, an exotic Chern insulator with flat band is observed with unpaired Dirac cone at the second critical point. Considering the polariton spin degree of freedom, we find that the choice of field polarization allows oppositely polarized polaritons to either co-propagate or counter-propagate in chiral edge states.
Accepted by PRB
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Cited by in corpus (10)
- Non-reciprocal transport of Exciton-Polaritons in a non-Hermitian chain
- Anti-chiral edge states in an exciton polariton strip
- Non-Hermitian Topological End-Mode Lasing in Polariton Systems
- Optically driven rotation of exciton-polariton condensates
- Realization of Hofstadter's butterfly and a one-way edge mode in a polaritonic system
- Optically induced topological spin-valley Hall effect for exciton polaritons
- Weyl points and exceptional rings with polaritons in bulk semiconductors
- Coherent transfer of topological domain walls
- Microcavity polaritons for topological photonics
- Polariton Topological Insulators with Disclinations