Phase diffusion quantum entropy source on a silicon chip

Abstract

We report an accelerated laser phase diffusion quantum entropy source with all non-laser optical and optoelectronic elements implemented in silicon photonics. The device uses efficient and robust single-laser accelerated phase diffusion methods, and implements the whole quantum entropy source scheme including an unbalanced Mach-Zehnder interferometer with optimized splitting ratio, in a 0.5 mmx1 mm footprint. We demonstrate Gbps raw entropy-generation rates in a technology compatible with conventional CMOS fabrication techniques.

arXiv comment3 figures

References in corpus (4)

• Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
• A strong loophole-free test of local realism
• Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode
• A quantum entropy source on an InP photonic integrated circuit for random number generation