Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions
arXiv:1804.04104 · doi:10.1063/1.5029363
Abstract
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency can be made as large as 11%.
arXiv comment7 pages and 4 figures
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Cited by in corpus (6)
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- Spintronic nano-scale harvester of broadband microwave energy
- Low frequency non-resonant rectification in spin-diodes
- Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics