Low frequency non-resonant rectification in spin-diodes
arXiv:2004.01941 · doi:10.1103/PhysRevApplied.14.024043
Abstract
Spin-diodes are usually resonant in nature (GHz frequency) and tuneable by magnetic field and bias current with performances, in terms of sensitivity and minimum detectable power, overcoming the semiconductor counterpart, i.e. Schottky diodes. Recently, spin diodes characterized by a low frequency detection (MHz frequency) have been proposed. Here, we show a strategy to design low frequency detectors based on magnetic tunnel junctions having the interfacial perpendicular anisotropy of the same order of the demagnetizing field out-of-plane component. Micromagnetic calculations show that to reach this detection regime a threshold input power has to be overcome and the phase shift between the oscillation magnetoresistive signal and the input radiofrequency current plays the key role in determining the value of the rectification voltage.
References in corpus (8)
- Currents, Torques, and Polarization Factors in Magnetic Tunnel Junctions
- Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
- Spin transfer nano-oscillators
- Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field
- Spin torque resonant vortex core expulsion for an efficient radio-frequency detection scheme
- Micromagnetic understanding of stochastic resonance driven by spin-transfertorque
- Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions
- Noise properties of a resonance-type spin-torque microwave detector