Enhanced single photon emission from carbon nanotube dopant states coupled to silicon microcavities

Abstract

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here we show that integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single photon emitters on silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe enhancement of emission from the dopant states by a factor of $\sim$100, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, where $\sim$30% decrease of emission lifetime is observed. Statistics of photons emitted from the cavity-coupled dopant states are investigated by photon correlation measurements, and high-purity single photon generation is observed. Excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept low even when the excitation power increases, while single photon emission rate can be increased up to $\sim 1.7\times 10^7$ Hz.

arXiv comment6 pages, 3 figures

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• Azide modification forming luminescent sp2 defects on single-walled carbon nanotubes for near-infrared defect photoluminescence
• Near-unity radiative quantum efficiency of excitons in carbon nanotubes
• Quantum emission assisted by energy landscape modification in pentacene-decorated carbon nanotubes
• Trion-based High-speed Electroluminescence from Semiconducting Carbon Nanotube Films
• Waveguide coupled cavity-enhanced light emission from individual carbon nanotubes
• Macroscopically Self-Aligned and Chiralized Carbon Nanotubes: From Filtration to Innovation
• Electroluminescence and thermal radiation from metallic carbon nanotubes with defects
• Deterministic Formation of Single Organic Color Centers in Single-Walled Carbon Nanotubes
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• Topical review on acousto-optical Floquet engineering of single-photon emitters
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