Spin field-effect transistor action via tunable polarization of the spin injection in a Co/MgO/graphene contact
arXiv:1803.07911 · doi:10.1063/1.5049664
Abstract
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the spin injection using the field-effect. We propose a model based on a gate-dependent shift of the minimum in the graphene density of states with respect to the tunneling density of states of cobalt, which can explain the observed bias and gate dependence.
revised version, accepted by APL
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- Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics
- Effects of different lead magnetizations on the Datta-Das spin field-effect transistor
- Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
- Exploring room temperature spin transport under band gap opening in bilayer graphene
- Proximity-induced magnetization in graphene: Towards efficient spin gating
- Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate