Ultrafast spin initialization in a gated InSb nanowire quantum dots

Abstract

We propose a fast and accurate spin initialization method for a single electron trapped in an electrostatic quantum dot. The dot is created in a nanodevice composed of a catalytically grown indium antimonide (InSb) nanowire and nearby gates to which control voltages are applied. Initially we insert a single electron of arbitrary spin into the wire. Operations on spin are performed using the Rashba spin-orbit interaction induced by an electric field. First, a single pulse of voltages applied to lateral gates is used to split the electron wavepacket into two parts with opposite spin orientations. Next, another voltage pulse applied to the remaining gates rotates spins of both parts in opposite directions by $\pi /2$. This way, initially opposite spin parts eventually point in the same direction, along the axis of the quantum wire. We thus set spin in a predefined direction regardless of its initial orientation. This is achieved in time less than $60\mathrm{ps}$ without the use of microwaves, photons or external magnetic fields.

arXiv comment7 pages, 6 figures

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Cited by in corpus (2)

• Nanomaterials for Quantum Information Science and Engineering
• Spin-selective resonant tunneling induced by Rashba spin-orbit interaction in semiconductor nanowire