Induced quantum dots and wires: electron storage and delivery
arXiv:0712.1422 · doi:10.1103/PhysRevLett.100.126805
Abstract
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave packet interacting with the charge induced on the metal surface. Induced quantum wires guide the transfer of electrons along metal paths and induced quantum dots store the electrons in specific locations of the nanostructure. Induced dots and wires can be useful for devices operating on the electron spin.
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- Magnetic-field asymmetry of electron wave packet transmission in bent channels capacitively coupled to a metal gate
- Gate control of Berry phase in III-V semiconductor quantum dots
- Generation of Schrödinger's cat states in a planar semiconductor heterostructure
- Generation of spin-dependent coherent states in a quantum wire
- Resonant optical electron transfer in one-dimensional multiwell structures
- Topologically protected wave packets and quantum rings in silicene
- Gated combo nanodevice for sequential operations on single electron spin
- All-electric single electron spin initialization
- Ultrafast spin initialization in a gated InSb nanowire quantum dots