Valley-Dependent Magnetoresistance in Two-Dimensional Semiconductors
arXiv:1803.05144 · doi:10.1103/PhysRevB.97.201301
Abstract
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.
arXiv comment5 pages, 3 figures + 9 pages, 1 figure
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Cited by in corpus (9)
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- Berry curvature induced nonlinear magnetoresistivity in two dimensional systems
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