Room temperature deposition of superconducting Niobium Nitride films by ion beam assisted sputtering

Abstract

We use room temperature ion beam assisted sputtering (IBAS) to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures, X-ray diffraction and atomic force microscopy. Compared to reactive sputtering of NbN, films sputtered in presence of an ion beam show remarkable increase in the superconducting critical temperature T${}_{\mathrm{c}}$, while exhibiting lower sensitivity to nitrogen concentration during deposition. Thickness dependence of the superconducting critical temperature is comparable to films prepared by conventional methods at high substrate temperatures and is consistent with behavior driven by quantum size effects or weak localization.

7 pages, 6 figures

References in corpus (3)

• Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition
• Tunneling studies in a homogeneously disordered s-wave superconductor: NbN
• Superconducting Transition Temperature Modulation in NbN via EDL Gating

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