Carrier-Resolved Photo Hall Measurement in World-Record-Quality Perovskite and Kesterite Solar Absorbers

Abstract

Majority and minority carrier properties such as type, density and mobility represent fundamental yet difficult to access parameters governing semiconductor device performance, most notably solar cells. Obtaining this information simultaneously under light illumination would unlock many critical parameters such as recombination lifetime, recombination coefficient, and diffusion length; while deeply interesting for optoelectronic devices, this goal has remained elusive. We demonstrate here a new carrier-resolved photo-Hall technique that rests on a new identity relating hole-electron mobility difference ($\Delta \mu$), Hall coefficient ($h$), and conductivity ($\sigma$): $\Delta \mu =(2+d\ln h/d\ln \sigma )h\sigma$, and a rotating parallel dipole line ac-field Hall system with Fourier/lock-in detection for clean Hall signal measurement. We successfully apply this technique to recent world-record-quality perovskite and kesterite films and map the results against varying light intensities, demonstrating unprecedented simultaneous access to the above-mentioned parameters.

arXiv comment13 pages, 3 figures, supplementary materials (15 pages) including link to Movie S1

References in corpus (2)

• A Diamagnetic Trap with 1D Camelback Potential
• Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites?

Cited by in corpus (7)

• Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide
• Revealing the doping density in perovskite solar cells and its impact on device performance
• Pitfalls and prospects of optical spectroscopy to characterize perovskite-transport layer interfaces
• Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
• Variable Temperature and Carrier-Resolved Photo-Hall Measurements of High-Performance Selenium Thin-Film Solar Cells
• Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
• Electronic Trap Detection with Carrier-Resolved Photo-Hall Effect