Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition
arXiv:1801.04041 · doi:10.1063/1.5025472
Abstract
We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. We estimate the spin transport parameters by comparing the magnitude of the magnetoresistance in samples with different Pt thicknesses. We compare the spin Hall angle and the spin diffusion length of the ALD Pt layers to the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5nm agrees well with platinum thin films reported in the literature, whereas the spin Hall magnetoresistance is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future.
11 pages, 3 figures
References in corpus (5)
- Theory of spin Hall magnetoresistance
- Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity
- Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime
- Direct Method for Calculating Temperature-Dependent Transport Properties
- Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance