Half-metallicity in honeycomb-kagome-lattice Mg3C2 monolayer with carrier doping
arXiv:1712.08985 · doi:10.1039/C8CP01727A
Abstract
To obtain high-performance spintronic devices with high integration density, two-dimensional (2D) half-metallic materials are eagerly pursued all along. Here, we propose a stable 2D material with a honeycomb-kagome lattice, i.e., the Mg3C2 monolayer, based on first-principles calculations. This monolayer is an anti-ferromagnetic (AFM) semiconductor at its ground state. We further demonstrate that a transition from AFM semiconductor to ferromagnetic half-metal in this 2D material can be induced by carrier (electron or hole) doping. This magnetic transition can be understood by the Stoner criterion. In addition, the half-metallicity arises from the 2pz orbitals of the carbon (C) atoms for the electron-doped system, but from the C 2px and 2py orbitals for the case of hole doping. Our findings highlight a new promising material with controllable magnetic and electronic properties toward 2D spintronic applications.
6 figures,20 pages
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- Half-Metallic Graphene Nanoribbons
- Controlling electron-phonon interactions in graphene at ultra high carrier densities
- Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
- Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials
- Gate tuning of electronic phase transitions in two-dimensional NbSe
- Two-Dimensional Node-Line Semimetals in a Honeycomb-Kagome Lattice
- Prediction of High Temperature Quantum Anomalous Hall Effect in Two Dimensional Transition-Metal Oxides
- Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System