High frequency optomechanical disk resonators in III-V ternary semiconductors

Abstract

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0:5Ga0:5P and Al0:4Ga0:6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.

arXiv commentOptics Express, 2017

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• Cavity Optomechanics with Photonic Bound States in the Continuum
• Stress control of tensile-strained In${}_{1-x}$Ga${}_x$P nanomechanical string resonators
• Accurate modeling and characterization of photothermal forces in optomechanics
• Ar/Cl${}_2$ etching of GaAs optomechanical microdisks fabricated with positive electroresist
• High-Frequency GaAs Optomechanical Bullseye Resonator