Three-quarter Dirac points, Landau levels and magnetization in -(BEDT-TTF)I
arXiv:1708.06867 · doi:10.1103/PhysRevB.96.085430
Abstract
The energies as a function of the magnetic field () and the pressure are studied theoretically in the tight-binding model for the two-dimensional organic conductor, -(BEDT-TTF)I, in which massless Dirac fermions are realized. The effects of the uniaxial pressure () are studied by using the pressure-dependent hopping parameters. The system is semi-metallic with the same area of an electron pocket and a hole pocket at ~kbar, where the energies ) at the Dirac points locate below the Fermi energy ) when . We find that at ~kbar the Dirac cones are critically tilted. In that case a new type of band crossing occurs at "three-quarter"-Dirac points, i.e., the dispersion is quadratic in one direction and linear in the other three directions. We obtain new magnetic-field-dependences of the Landau levels ; at ~kbar ("three-quarter"-Dirac points) and at ~kbar (the critical pressure for the semi-metallic state). We also study the magnetization as a function of the inverse magnetic field. We obtain two types of quantum oscillations. One is the usual de Haas van Alphen (dHvA) oscillation, and the other is the unusual dHvA-like oscillation which is seen even in the system without the Fermi surface.
25 pages, 31 figures
References in corpus (11)
- Tilted anisotropic Dirac cones in quinoid-type graphene and alpha-(BEDT-TTF)_2I_3
- Merging of Dirac points in a two-dimensional crystal
- Phase analysis of quantum oscillations in graphite
- A new magnetic field dependence of Landau levels on a graphene like structure
- Zero modes of tight binding electrons on the honeycomb lattice
- Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance
- Quantum Hall effect and the topological number in graphene
- Quantum oscillations of magnetization in the tight-binding electrons on honeycomb lattice
- Edge states in the three-quarter filled system, -(BEDT-TTF)I
- Damping of field-induced chemical potential oscillations in ideal two-band compensated metals
- Quantum Hall conductance and de Haas van Alphen oscillation in a tight-binding model with electron and hole pockets for (TMTSF)NO
Cited by in corpus (7)
- Semi-Dirac Fermions in a Topological Metal
- De Haas-van Alphen oscillations near the Lifshitz transition from two electron pockets to one electron pocket in the two-dimensional Dirac fermion systems
- Crossover in Electronic Specific Heat near Narrow-Sense Type-III Dirac Cones
- Enhancements of the 3/2 and 5/2 frequencies of de Haas-van Alphen oscillations near the Lifshitz transition in the two-dimensional compensated metal with overtilted Dirac cones
- Designer gapped and tilted Dirac cones in lateral graphene superlattices
- Anomalous Landau levels and quantum oscillation in rotation-invariant insulators
- Hofstadter Butterfly and Broken-Symmetry Quantum Hall States in α-Type Organic Dirac Fermion Systems