Edge states in the three-quarter filled system, $\alpha$-(BEDT-TTF)${}_2$I${}_3$

Abstract

We study the edge states in the two-dimensional conductor $\alpha$-(BEDT-TTF)${}_2$I${}_3$ theoretically. We show that the Dirac points and the edge states appear at the 3/4 and 1/4 filling as well as the half filling, due to four sites in the unit cell. This situation is in contract with the graphene, where the Dirac points and the edge states appear only at the half filling case. It is shown that the localization length of the edge states can become very large.

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Cited by in corpus (6)

• Topological Insulator State due to Finite Spin-Orbit Interaction in an Organic Dirac Fermion System
• Chern Insulator Phase in a Lattice of an Organic Dirac Semimetal with Intracellular Potential and Magnetic Modulations
• Three-quarter Dirac points, Landau levels and magnetization in $\alpha$-(BEDT-TTF)${}_2$I${}_3$
• Topological Properties of τ-Type Organic Conductors with a Checkerboard Lattice
• Domain Wall Conductivity with strong Coulomb interaction of two-dimensional massive Dirac Electrons in the Organic Conductor $\alpha$-(BEDT-TTF)${}_2$I${}_3$
• Anomalous Spin Transport Properties of Gapped Dirac Electrons with Tilting