Quantized large-bias current in the anomalous Floquet-Anderson insulator

Abstract

We study two-terminal transport through two-dimensional periodically driven systems in which all bulk Floquet eigenstates are localized by disorder. We focus on the Anomalous Floquet-Anderson Insulator (AFAI) phase, a topologically-nontrivial phase within this class, which hosts topologically protected chiral edge modes coexisting with its fully localized bulk. We show that the unique properties of the AFAI yield remarkable far-from-equilibrium transport signatures: for a large bias between leads, a quantized amount of charge is transported through the system each driving period. Upon increasing the bias, the chiral Floquet edge mode connecting source to drain becomes fully occupied and the current rapidly approaches its quantized value.

5+ pages; to appear in PRB(R)

References in corpus (20)

• Photovoltaic Hall effect in graphene
• Topological characterization of periodically-driven quantum systems
• Periodically-driven quantum systems: Effective Hamiltonians and engineered gauge fields
• Driven quantum transport on the nanoscale
• Photoinduced transition between conventional and topological insulators in two-dimensional electronic systems
• Chiral symmetry and bulk--boundary correspondence in periodically driven one-dimensional systems
• Disorder-induced Floquet Topological Insulators
• Observation of Quantized Conductance in Neutral Matter
• Effective Theory of Floquet Topological Transitions
• Modulated Floquet Topological Insulators
• Topological index for periodically driven time-reversal invariant 2D systems
• Chiral Floquet Phases of Many-body Localized Bosons
• Floquet Topological Order in Interacting Systems of Bosons and Fermions
• Radical chiral Floquet phases in a periodically driven Kitaev model and beyond
• Interacting invariants for Floquet phases of fermions in two dimensions
• Materials design from non-equilibrium steady states: driven graphene as a tunable semiconductor with topological properties
• Optical Control of Topological Quantum Transport in Semiconductors
• Controlling the Floquet state population and observing micromotion in a periodically driven two-body quantum system
• Driving protocol for a Floquet topological phase without static counterpart
• An infinite family of 3d Floquet topological paramagnets

Cited by in corpus (24)

• Real-space detection and manipulation of topological edge modes with ultracold atoms
• $N$-band Hopf insulator
• The Floquet Engineer's Handbook
• Classification of interacting Floquet phases with $U(1)$ symmetry in two dimensions
• Stirring by Staring: Measurement Induced Chirality
• Topological Signatures in Quantum Transport in Anomalous Floquet-Anderson Insulators
• Floquet Spectrum and Two-Terminal Conductance of a Transition Metal Dichalcogenide Ribbon under a Circularly Polarized Laser Field
• Photoinduced Quantum Anomalous Hall States in the Topological Anderson Insulator
• Robustness of quantized transport through edge states of finite length: Imaging current density in Floquet topological vs. quantum spin and anomalous Hall insulators
• Anomalous Goos-Hänchen shift in the Floquet scattering of Dirac fermions
• Quantized Floquet topology with temporal noise
• Josephson-Current Signatures of Unpaired Floquet Majorana Bound States
• Floquet topological insulators: from band structure engineering to novel non-equilibrium quantum phenomena
• Anomalous levitation and annihilation in Floquet topological insulators
• The Streda Formula for Floquet Systems: Topological Invariants and Quantized Anomalies from Cesaro Summation
• Topologically localized insulators
• Quantum phase transitions and a disorder-based filter in a Floquet system
• Measurement Induced Chirality II: Diffusion and Disorder
• The anomalous Floquet Anderson insulator in a continuously driven optical lattice
• Floquet topological phase transitions induced by uncorrelated or correlated disorder
• Proposal for realizing anomalous Floquet insulators via Chern band annihilation
• Quantized charge transport in disordered Floquet topological insulators in the absence of Anderson localization
• Quantized Acoustoelectric Floquet Effect in Quantum Nanowires
• Noise resilience of two-dimensional Floquet topological phases