Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

Abstract

We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of silicon content, highlighting the controllability of the fabrication process.

arXiv comment4 pages, 3 figures, 2 tables; Re-submitted to Optics Letters

References in corpus (4)

• Second-order nonlinear optical metamaterials: ABC-type nanolaminates
• Atomistic structure of amorphous silicon nitride from classical molecular dynamics simulations
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Cited by in corpus (2)

• Optically reconfigurable quasi-phase-matching in silicon nitride microresonators
• High-efficiency second-harmonic and sum-frequency generation in a silicon nitride microring integrated with few-layer GaSe