Hybridization-induced interface states in a topological insulator-magnetic metal heterostructure
arXiv:1707.06319 · doi:10.1103/PhysRevB.96.235433
Abstract
Recent experiments demonstrating large spin-transfer torques in topological insulator (TI)-ferromagnetic metal (FM) bilayers have generated a great deal of excitement due to their potential applications in spintronics. The source of the observed spin-transfer torque, however, remains unclear. This is because the large charge transfer from the FM to TI layer would prevent the Dirac cone at the interface from being anywhere near the Fermi level to contribute to the observed spin-transfer torque. Moreover, there is yet little understanding of the impact on the Dirac cone at the interface from the metallic bands overlapping in energy and momentum, where strong hybridization could take place. Here, we build a simple microscopic model and perform first-principles-based simulations for such a TI-FM heterostructure, considering the strong hybridization and charge transfer effects. We find that the original Dirac cone is destroyed by the hybridization as expected. Instead, we find a new interface state which we dub 'descendent state' to form near the Fermi level due to the strong hybridization with the FM states at the same momentum. Such a `descendent state' carries a sizable weight of the original Dirac interface state, and thus inherits the localization at the interface and the same Rashba-type spin-momentum locking. We propose that the `descendent state' may be an important source of the experimentally observed large spin-transfer torque in the TI-FM heterostructure.
arXiv comment7 pages, 7 figures
References in corpus (16)
- First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
- Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
- Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
- Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
- Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
- Two-dimensional surface charge transport in topological insulators
- Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
- Dirac Spin-Orbit Torques at the Surface of Topological Insulators
- Band structure and spin texture of BiSe/3d ferromagnetic metal interface
- Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes
- Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures
- Spin-Torque Generation in Topological-Insulator-Based Heterostructures
- Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators
- Magnetic proximity effect at BiSe/EuS interface with broken inversion symmetry
- Bulk metals with helical surface states
- Effects of surface-bulk hybridization in 3D topological `metals'
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