Band structure of a IV-VI black phosphorus analogue, the thermoelectric SnSe

Abstract

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.

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• Evaluating the exfoliation of two-dimensional materials with a Green's function surface model
• Optical phonons of SnSe(1-x)Sx layered semiconductor alloys
• Tunable Low-Loss Hyperbolic Plasmon Polaritons in a T${}_d$-WTe${}_2$ Single Layer
• Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping
• Direct band gap in gallium sulfide nanostructures
• Direct observation of multiple conduction-band minima in high-performance thermoelectric SnSe
• Superconductivity, valence-skipping and topological crystalline metal in AgSnSe${}_2$
• Valley polarization generated in 3-dimensional group-IV monochalcogenids
• Photoinduced anisotropic lattice dynamic response and domain formation in thermoelectric SnSe