Side-wall spacer passivated sub-um Josephson junction fabrication process
arXiv:1706.06397 · doi:10.1088/1361-6668/aa9411
Abstract
We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1 -- 3.0 kA/cm. We discuss the applicability of the junction process in the context of different applications, such as, SQUID magnetometers and Josephson parametric amplifiers.
arXiv comment8 pages, 4 figures
References in corpus (5)
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- Efficient electronic cooling above 2 K by niobium-based superconducting tunnel junctions
- Low barrier ZrO-based Josephson junctions
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