Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Abstract

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

9 pages

References in corpus (7)

• Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires
• Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves
• Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves
• Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO${}_3$-GaAs hybrid
• Direct observation of dynamic surface acoustic wave controlled carrier injection into single quantum posts using phase-resolved optical spectroscopy
• Radio frequency occupancy state control of a single nanowire quantum dot
• Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Cited by in corpus (4)

• Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
• Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures
• Control of single photon emitters in semiconductor nanowires by surface acoustic waves
• Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots