In-Plane Magnetization Induced Quantum Anomalous Hall Effect in Atomic Crystals of Group-V Elements

Abstract

We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general tight-binding Hamiltonian with $s{p}^3$ orbitals via Slater-Koster two-center approximation, and then numerically show that for weak and strong spin-orbit couplings the systems harbor QAHEs with Chern numbers of $\mathcal{C}=\pm 1$ and $\pm 2$ , respectively. For the $\mathcal{C}=\pm 1$ phases, we find the critical phase-transition magnetization from a trivial insulator to QAHE can become extremely small by tuning the spin-orbit coupling strength. Although the resulting band gap is small, it can be remarkably enhanced by orders via tilting the magnetization slightly away from the in-plane orientation. For the $\mathcal{C}=\pm 2$ phases, we find that the band gap is large enough for the room-temperature observation. Although the critical magnetization is relatively large, it can be effectively decreased by applying a strain. All these suggest that it is experimentally feasible to realize high-temperature QAHE from in-plane magnetization in atomic crystal layers of group-V elements.

6 pages, 3 figures

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Cited by in corpus (4)

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• Unconventional anomalous Hall effect from magnetization parallel to the electric field
• Impurity-potential-induced gap at the Dirac point of topological insulators with in-plane magnetization
• Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite