Symmetric-Gapped Surface States of Fractional Topological Insulators
arXiv:1706.00429 · doi:10.1103/PhysRevB.96.195105
Abstract
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic -angle and a discrete gauge field. They are the proper generalizations of the T-pfaffian state and pfaffian/anti-semion state and feature an extended periodicity compared with their of "integer" topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.
5 pages, 33 references and 2 pages of supplemental material
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