Symmetric-Gapped Surface States of Fractional Topological Insulators

Abstract

We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $\theta$-angle ${\theta }_{em}=\frac{\pi }{3}$ and a discrete ${\mathbb{Z}}_3$ gauge field. They are the proper generalizations of the T-pfaffian state and pfaffian/anti-semion state and feature an extended periodicity compared with their of "integer" topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.

arXiv comment5 pages, 33 references and 2 pages of supplemental material

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