Theory of Exciton-Phonon Coupling

Abstract

The effects of the electron-phonon interaction on optical excitations can be understood in terms of exciton-phonon coupling, and require a careful treatment in low-dimensional materials with strongly bound excitons or strong electron-hole interaction in general. Through phonon absorption and emission processes, the optically accessible excitons are scattered into otherwise optically dark finite-momentum exciton states. We derive a practical expression for the phonon-induced term of the exciton self-energy (denoted as the exciton-phonon self-energy) that gives the temperature dependence of the optical transition energies and their lifetime broadening resulting from the exciton's interaction with the phonons. We illustrate this theory on a two-dimensional model, and show that our expression for the exciton-phonon self-energy differs qualitatively from previous expressions found in the literature that neglect the exciton binding or electron-hole correlations.

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Cited by in corpus (7)

• Signatures of Dimensionality and Symmetry in Exciton Bandstructure: Consequences for Time-Evolution
• Exciton lifetime and optical linewidth profile via exciton-phonon interactions: Theory and first-principles calculations for monolayer MoS${}_2$
• Exciton-phonon interaction calls for a revision of the "exciton" concept
• Hot carrier extraction from 2D semiconductor photoelectrodes
• Nonuniform grids for Brillouin zone integration and interpolation
• Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers
• Phonon-mediated exciton relaxation in two-dimensional semiconductors: selection rules and relaxation pathways