Revealing large-scale homogeneity and trace impurity sensitivity of GaAs nanoscale membranes

Abstract

III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Capping of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also to a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the sub-micron and sub-millimeter scale, demonstrating the potential of these structures for large scale applications.

arXiv commentjust accepted in Nano Letters, http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b00257

References in corpus (6)

• Single nanowire solar cells beyond the Shockley-Queisser limit
• Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
• Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
• Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires
• Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires
• High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire

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• Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency