Analysis of a Sputtered Si Surface for Ar Sputter Gas Supply Purity Monitoring

Abstract

For sputter depth profiling often sample erosion by Ar+ ions is used. Only a high purity of the sputter gas and a low contamination level of the ion gun avoids misleading depth profile measurements results. Here a new measurement procedure is presented, which monitors these parameters. A Si sample is sputtered inside the instrument and then the surface concentration of the elements Ar, C, N and O is measured. Results of such measurements of an XPS microprobe PHI Quantum 2000, which were recorded over a period of 10 years, are presented.

arXiv comment5 pages, 3 figures

References in corpus (3)

• Long Time Stability of the Energy Scale Calibration of a Quantum 2000
• Characterisation of the primary X-ray source of an XPS microprobe Quantum 2000
• Vacuum Quality Monitoring of Analytical Sputter Depth Profile Equipment by Recontamination Measurements of a Sputtered Ti Surface