Strong Correlation Effects on Surfaces of Topological Insulators via Holography
arXiv:1703.07361 · doi:10.1103/PhysRevB.96.041104
Abstract
We investigate effects of strong correlation on the surface state of topological insulator (TI). We argue that electrons in the regime of crossover from weak anti-localization to weak localization, are strongly correlated and calculate magneto-transport coefficients of TI using gauge gravity principle. Then, we examine, magneto-conductivity (MC) formula and find excellent agreement with the data of chrome doped BiTe in the crossover regime. We also find that cusp-like peak in MC at low doping is absent, which is natural since quasi-particles disappear due to the strong correlation.
5 pages, 6 figures, figure and reference added, discussion on the result added
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- Transport properties of a holographic model with novel gauge-axion coupling
- Random spin-orbit gates in the system of a Topological insulator and a Quantum dot
- Mean field theory for strongly coupled systems: Holographic approach
- Determination of Dynamical exponents of Graphene at quantum critical point by holography
- Impurity Effect on Hysteric Magnetoconductance: Holographic Approach
- The magnetic effect on strongly correlated system with two currents near the QCP from holography