Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells
arXiv:1703.07156 · doi:10.1063/1.4984118
Abstract
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.
arXiv comment6 pages, 5 figures
References in corpus (16)
- Evidence for a Goldstone Mode in a Double Layer Quantum Hall System
- Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing
- Vanishing Hall Resistance at High Magnetic Field in a Double Layer Two-Dimensional Electron System
- Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
- Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
- Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in CdTe/(Cd,Mg)Te quantum wells
- Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
- Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: resonant spin amplification versus spin mode-locking
- Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a GaAs/AlGaAs quantum well
- Magnetoresistance oscillations in multilayer systems - triple quantum wells
- Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
- Electron Density Dependence of in-plane Spin Relaxation Anisotropy in GaAs/AlGaAs Two-Dimensional Electron Gas
- Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
- Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases
- Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells
- Resonant optical control of the electrically-induced spin polarization by periodic excitation