Quantum Hall Spin Diode

Abstract

Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin magnetizations. In the anti-parallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the $N=1$ Landau level at filling factors $\nu =5/2$ and 7/2 is essentially complete, and, with the aid of an in-plane magnetic field component, that Landau level mixing at these filling factors is weak in the samples studied.

5 pages, 3 postscript figures

References in corpus (2)

• Spin Transition in the Half-Filled Landau Level
• Spin and the Coulomb Gap in the Half-Filled Lowest Landau Level

Cited by in corpus (10)

• Landau-level-mixing and the ground state of the 5/2 quantum Hall effect
• Energetics of the PH-Pfaffian state and the 5/2-fractional quantum Hall effect
• Direct observation of composite fermions and their fully spin-polarized Fermi sea near $\nu =5/2$
• Tunneling spectroscopy of localized states of ${\mathrm{WS}}_2$ barriers in vertical van der Waals heterostructures
• Thermal rectification and negative differential thermal conductivity based on a parallel-coupled double quantum-dot
• Bardeen-Cooper-Schrieffer pairing of composite fermions
• Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system
• Tunneling density of states, correlation energy, and spin polarization in the fractional quantum Hall regime
• Short and Long Ranged Impurities in Fractional Quantum Hall Systems
• Edge Induced Topological Phase Transition of the Quantum Hall state at Half Filling