Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique

Abstract

Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals extremely high dimensional uniformity due to a combination of uniform nucleation sites, lack of secondary nucleation of NWs, and self-regulated growth under the effect of nucleation antibunching. Consequently, we observed the first evidence of sub-Poissonian GaAs NW length distributions. The high phase purity of the NWs is demonstrated using complementary transmission electron microscopy (TEM) and high-resolution x-ray diffractometry (HR-XRD). It is also shown that, while NWs are to large extent defect-free with up to 2 um long twin-free zincblende segments, low temperature micro-photoluminescence spectroscopy reveals that the proportion of structurally disordered sections can be detected from their spectral properties.

17 pages, 7 figures

References in corpus (3)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Bright single-photon sources in bottom-up tailored nanowires
• Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy