Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two Dimensional Semiconducting Transition Metal Dichalcogenides
arXiv:1612.07014 · doi:10.1088/1674-1056/26/3/037801
Abstract
The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley related many particle electronic states in semiconducting monolayer transitional metal dichalcogenides.
Invited Review of Chinese Physics B
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- Laser-induced topological -wave superconductivity in bilayer transition metal dichalcogenides
- Femtosecond currents in transition metal dichalcogenides monolayers
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- Ultrafast strong-field absorption in gapped graphene
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