Pressure-Induced Metallization in Iron-Based Ladder Compounds Ba$_{1-x}$Cs$_x$Fe$_2$Se$_3$

Takafumi Hawai; Chizuru Kawashima; Kenya Ohgushi; Kazuyuki Matsubayashi; Yusuke Nambu; Yoshiya Uwatoko; Taku J. Sato; Hiroki Takahashi

doi:10.7566/JPSJ.86.024701

paper

Pressure-Induced Metallization in Iron-Based Ladder Compounds Ba $_{1 - x}$ Cs $_{x}$ Fe $_{2}$ Se $_{3}$

arXiv:1612.05394 · doi:10.7566/JPSJ.86.024701

Abstract

Electrical resistivity measurements have been performed on the iron-based ladder compounds Ba $_{1 - x}$ Cs $_{x}$ Fe $_{2}$ Se $_{3}$ ( $x$ = 0, 0.25, 0.65, and 1) under high pressure. A cubic anvil press was used up to 8.0 GPa, whereas further higher pressure was applied using a diamond anvil cell up to 30.0 GPa. Metallic behavior of the electrical conductivity was confirmed in the $x$ = 0.25 and 0.65 samples for pressures greater than 11.3 and 14.4 GPa, respectively, with the low-temperature $lo g T$ upturn being consistent with weak localization of 2D electrons due to random potential. At pressures higher than 23.8 GPa, three-dimensional Fermi-liquid-like behavior was observed in the latter sample. No metallic conductivity was observed in the parent compounds BaFe $_{2}$ Se $_{3}$ ( $x$ = 0) up to 30.0 GPa and CsFe $_{2}$ Se $_{3}$ ( $x$ = 1) up to 17.0 GPa. The present results indicate that the origins of the insulating ground states in the parent and intermediate compounds are intrinsically different; the former is a Mott insulator, whereas the latter is an Anderson insulator owing to the random substitution of Cs for Ba.

5 pages, 3 figures

References in corpus (1)

Coexistence of localized and itinerant electrons in BaFe2X3 (X = S and Se) revealed by photoemission spectroscopy

Pressure-Induced Metallization in Iron-Based Ladder Compounds Ba1−x​Csx​Fe2​Se3​

Abstract

References in corpus (1)

Cited by in corpus (3)

Pressure-Induced Metallization in Iron-Based Ladder Compounds Ba $_{1 - x}$ Cs $_{x}$ Fe $_{2}$ Se $_{3}$