Electronic structure study of vanadium spinels by using density functional theory and dynamical mean field theory
arXiv:1612.01273 · doi:10.1209/0295-5075/117/37002
Abstract
Theoretically, various physical properties of AVO (A=Zn, Cd and Mg) spinels have been extensively studied for last 15 years. Besides of this, no systematic comparative study has been done for these compounds, where the material specific parameters are used. Here, we report the comparative electronic behaviour of these spinels by using a combination of density functional theory and dynamical mean-field theory, where the self-consistent calculated Coulomb interaction and Hund's coupling (determined by Yukawa screening ) are used. The main features, such as insulating band gaps (), degree of itinerancy of V 3 electrons and position of lower Hubbard band are observed for these parameters in these spinels. The calculated values of for ZnVO, CdVO and MgVO are found to be 0.9 eV, 0.95 eV and 1.15 eV, respectively, where the values of are close to experiment for ZnVO and MgVO. The position of lower Hubbard band are observed around -1.05 eV, -1.25 eV and -1.15 eV for ZnVO, CdVO and MgVO, respectively, which are also in good agreement with the experimental data for ZnVO. The order of average impurity hybridization function of V site are found to be ZnVOMgVOCdVO. Hence, the degree of localization of V 3 electrons is largest for CdVO and smallest for ZnVO, which is in accordance with our earlier results. Hence, present work shows the importance of material specific parameters to understand the comparative electronic behaviour of these compounds.
7 pages, 5 figures
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Cited by in corpus (3)
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- Self-consistent evaluation of effective Coulomb interaction of V atom and its importance to understand the comparative electronic behaviour of vanadium spinels