Ultrasensitive 1D field-effect phototransistor: CH${}_3$NH${}_3$PbI${}_3$ nanowire sensitized individual carbon nanotube

Abstract

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH${}_3$NH${}_3$PbI${}_3$ nanowires (MAPbI${}_3$NW). These devices represent light responsivities of R=7.7x10${}^5$ A/W at low-lighting conditions in the nWmm${}^{-2}$ range, unprecedented among CNT-based photo detectors. At high incident power (~1 mWmm${}^{-2}$), light soaking results in a negative photocurrent, the device turns insulating. We interpret the phenomenon as a result of efficient electron-hole separation and charge transfer of holes from the perovskite to the carbon nanotube, which improves conductance by increasing the number of carriers, but leaves electrons behind. At high illumination intensity the random electrostatic potential of these quench the mobility in the nanotube. The single CNT device geometry allows the local study of the MAPbI${}_3$NW/CNT interface for metallic and semiconducting CNTs separately. Infrared and Raman spectroscopy studies of CNT-CH${}_3$NH${}_3$PbI${}_3$ composites revealed that photo-doping takes place at the interface.

References in corpus (6)

• Carbon Nanotubes as Schottky Barrier Transistors
• Scaling of excitons in carbon nanotubes
• Tuning of the Thermoelectric Figure of Merit of CH${}_3$NH${}_3$MI${}_3$ (M=Pb,Sn) Photovoltaic Perovskites
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• Study of charge dynamics in transparent single-walled carbon nanotube films
• Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

Cited by in corpus (2)

• Three-dimensionally Enlarged Photoelectrodes by a Protogenetic Inclusion of Vertically Aligned Carbon Nanotubes into CH3NH3PbBr3 Single Crystals
• Influence of the organic cation disorder on photoconductivity in ethylenediammonium lead iodide, NH3CH2CH2NH3PbI4