Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition
arXiv:1611.05195 · doi:10.1103/PhysRevB.95.144202
Abstract
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and longitudinal resistivity strongly differ, if temperature T or metal content x are variable parameters: Rh(T)~R(T)^0.4-0.5 obtained from the temperature variation of R and Rh at fixed x, while Rh(x)/x~R(x)^0.24, obtained from measurements at the fixed low temperature region (10-40 K) for samples with different x. We qualitatively describe our experimental data in the frame of phenomenological model of two sources of AHE e.m.f. arising from metallic nanogranules and insulating tunneling regions, respectively, at that the tunneling AHE (TAHE) source is strongly shunted due to generation of local circular Hall currents. We consider our experimental results as the first experimental proof of the TAHE manifestation.
27 pages, 12 figures
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