Anomalous resistivity upturn in epitaxial L21-Co2MnAl films
arXiv:1611.04013
Abstract
We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to structural disorder, and robust independence of magnetic fields. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a considerable tunability of the structural and electronic disorder of magnetic films by varying growth temperature, affording unprecedented insights into the spin polarization and the resistivity upturn.
References in corpus (9)
- Spin torque switching with the giant spin Hall effect of tantalum
- Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product
- Berry-curvatures and anomalous Hall effect in Heusler compounds
- Doping and disorder in the CoMnAl and CoMnGa half-metallic Heusler alloys
- Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films
- Anomalous Hall Effect in Chemically Disordered L10-Mn1.5Ga
- Anomalous Hall effect in L10-MnAl films with controllable orbital two-channel Kondo effect
- Existence of two-channel Kondo regime for tunneling impurities with resonant scattering
- Observation of orbital two-channel Kondo effect in a ferromagnetic L10-MnGa film