Valley Hall Effect and Nonlocal Transport in Strained Graphene

Abstract

Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory of the strain-induced VHE starting from the quantum Boltzmann equation. This allows us to show that, averaging over short-range impurity configurations destroys quantum coherence between valleys, leaving the elastic scattering time and inter-valley scattering rate as the only parameters characterizing the transport theory. Using the theory, we compute the nonlocal resistance of a Hall bar device in the diffusive regime. Our theory is also relevant for the study of moderate strain effects in the (nonlocal) transport properties of other two-dimensional materials and van der Walls heterostructures.

6 pages, 4 figures

References in corpus (8)

• The electronic properties of graphene
• Detecting Topological Currents in Graphene Superlattices
• Generation of pure bulk valley current in graphene
• Resonant low-energy electron scattering on short-range impurities in graphene
• Nonlocal topological valley transport at large valley Hall angles
• Strain-induced modifications of transport in gated graphene nanoribbons
• Transport anomaly at the ordering transition for adatoms on graphene
• Wavepacket scattering on graphene edges in the presence of a (pseudo) magnetic field

Cited by in corpus (6)

• Hydrodynamic approach to two-dimensional electron systems
• Pseudo-magnetic field-induced ultra-slow carrier dynamics in periodically strained graphene
• Valley polarization braiding in strained graphene
• The Haldane model under nonuniform strain
• Control of Spin Diffusion and Suppression of the Hanle Effect by the Coexistence of Spin and Valley Hall Effects
• Valley filters, accumulators, and switches induced in graphene quantum dots by lines of adsorbed hydrogen atoms